• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    This elementary cell comprises a reception antenna (2), a transmission antenna (3), and comprising first and second radiation surfaces separated from one another by a separation zone, a phase shift circuit comprising switches (4) each presenting an on state, respectively blocked, in which the corresponding switch (4) allows, respectively blocks, a flow of a current between the first and second radiation surfaces; a ground plane (5); a first printed circuit board (6) comprising a first surface (60) provided with the receiving antenna (2), and a second opposing surface provided with the ground plane (5); a wafer (7) of a semiconductor material comprising a first surface (70) provided with first and second radiation surfaces, and in that the switches (4) are formed in the separation zone, in a monolithic manner with the transmission antenna (3).
    公开号:FR3039711A1
    申请号:FR1557207
    申请日:2015-07-28
    公开日:2017-02-03
    发明作者:Antonio Clemente；Laurent Dussopt；Bruno Reig
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    ELEMENTARY CELL OF A TRANSMITTER NETWORK FOR A
    RECONFIGURABLE ANTENNA
    The present invention relates to an elementary cell of a transmitter network for a reconfigurable antenna at an operating frequency, preferably between 30 GHz and 110 GHz. The present invention also relates to a reconfigurable antenna comprising a transmitter network comprising such elementary cells.
    By "reconfigurable" is meant that at least one characteristic of the antenna can be modified during its lifetime, after its manufacture. The generally modifiable characteristic (s) are frequency response, radiation pattern (also called beam), and polarization. The reconfiguration of the frequency response covers various functionalities such as frequency switching, frequency tuning, bandwidth variation, frequency filtering and so on. The reconfiguration of the radiation pattern covers various features such as angular scanning of the beam pointing direction (also called misalignment), beamwidth (i.e., concentration of radiation in a particular direction), spatial filtering, beam or multibeam formation (eg multiple narrow beams replacing a wide beam) etc.
    Concerning the reconfiguration of the radiation pattern, there are different types of reconfigurable antenna, including: - a phased array antenna, - a reflective array antenna ("Reflectarray antenna" in English), English language), - transmitting antenna ("Transmitarray antenna" in English).
    Such reconfigurable antennas are particularly advantageous from the C band (4-8 GHz) to the W band (75-110 GHz) for the following applications: - automotive assistance and driver assistance radars, with a view to active safety, - Very high resolution imaging and surveillance systems, - Very high-speed millimeter-wave communications systems (inter-building or intra-building communications in a home automation or building automation environment), - Communication links low-orbit LEO (low Earth Orbit) satellite orbit telemetry in Ka-band, satellite telecommunications with reconfigurable primary source (SOTM ™ for Satcom-on-the-Move in English, Internet, Television etc.), - point-to-point and point-to-multipoint link systems (metropolitan networks, Fronthaul and Backhaul systems for cellular networks, radio access for mobile networks) nth generation etc.).
    The present invention more specifically relates to a reconfigurable antenna with a transmitter network at millimeter frequencies. A transmitting network comprises at least one radiation source, preferably emitting in a spectral range between 30 GHz and 110 GHz, the radiation source or sources irradiating a set of elementary cells.
    An elementary cell of a transmitter network known from the state of the art, in particular from document WO 2012/085067, comprises: a reception antenna, planar, intended to receive an incident wave; a planar transmission antenna intended to transmit the incident wave with a phase shift, and comprising first and second radiation surfaces separated from one another by a separation zone so as to be electrically isolated, the transmission antenna and the receiving antenna being electrically connected to each other; a phase-shifting circuit configured to introduce the phase shift, and comprising switches each having an on state, respectively blocked, in which the corresponding switch allows, respectively blocks, a flow of a current between the first and second radiation surfaces of the transmission antenna; a ground plane on each side of which the reception antenna and the transmission antenna are arranged; a first printed circuit board comprising a first surface provided with the receiving antenna, and a second opposite surface provided with the ground plane; a second printed circuit board comprising a first surface assembled on the ground plane by means of a a bonding film, and a second opposite surface provided with the transmission antenna, the first surface being provided with polarization lines of the switches.
    The phase shift circuit of each elementary cell makes it possible to reconfigure the radiation pattern of the transmitting network antenna. The switches make it possible to modify the phase of the wave transmitted by each elementary cell of the network. Such a transmitter network has many advantages: - energy efficiency at microwave frequencies including millimeters (of the order of a few GHz) through the transmission in the air between the radiation source (s) and the elementary cells - Reduced footprint, mass and cost of implementation thanks to the planar technology used (planar antennas on printed circuit boards), - a radiation pattern provided with a good polarization purity because the imperfections can compensate each other at the same time. within the network, - a radiation pattern provided with good quality as to the shape of the beam and the side lobes due to the position of the radiation source or sources located opposite the beam generated by the network.
    In order to obtain satisfactory performances, the characteristic dimension of the elementary cells must be less than or equal to the half-wavelength of the radiation source or sources. When the spectral range of the radiation source or sources is in particular between 30 GHz and 110 GHz, the corresponding wavelength is less than 1 cm. Now, the switches are formed on the second surface of the second printed circuit board, in the separation zone. The formation of the switches therefore becomes problematic because of the reduced dimensions of the transmission antenna. The switches, arranged inside a package ("package" in English), and transferred to the second surface of the second printed circuit board, are then likely to significantly degrade the performance of the elementary cell. Indeed, the housing of each switch tends to disturb the environment close to the first and second radiation surfaces, and thereby affects the radiation pattern of the transmission antenna. In addition, electrical connections are present between the housing and the transmission antenna to make the corresponding switch functional. These electrical connections complicate the integration of the switches, occupying a non-negligible space in the separation zone, which is reduced in size.
    Thus, the present invention aims to remedy all or part of the aforementioned drawbacks, and for this purpose concerns an elementary cell of a transmitting network for an antenna reconfigurable at an operating frequency, preferably between 30 GHz and 110 GHz, the elementary cell comprising: - a reception antenna, planar, intended to receive an incident wave; - A planar transmission antenna for transmitting the incident wave with a phase shift, and comprising first and second radiation surfaces separated from each other by a separation zone so as to be electrically isolated; a phase-shifting circuit configured to introduce the phase shift, and comprising switches each having an on state, respectively blocked, in which the corresponding switch allows, respectively blocks, a flow of a current between the first and second radiation surfaces of the transmission antenna; a ground plane on each side of which the reception antenna and the transmission antenna are arranged; a first printed circuit board comprising a first surface provided with the receiving antenna, and a second opposite surface provided with the ground plane; the elementary cell being remarkable in that it comprises a wafer of a semiconductor material, electrically isolated from the ground plane, and comprising a first surface provided with the first and second radiating surfaces of the transmission antenna, and that the switches are formed at the first surface of the wafer, in the separation zone, monolithically with the transmission antenna.
    The term "slice" (wafer in English) means a cut portion of an ingot of a semiconductor material, conventionally a disk, used as a base material for forming components, in this case switches.
    By "semiconductor" is meant that the material has an electrical conductivity at 300 K between 10'8 and 103 S / cm.
    By "monolithic" is meant that the transmission antenna and the switches share a single substrate, in this case the slice. The transmission antenna and the switches are made jointly during the same manufacturing process.
    Thus, such an elementary cell according to the invention makes it easier to integrate the switches in the separation zone, despite the restricted dimensions of the transmission antenna, when the operating frequency is between 30 GHz and 110 GHz. Indeed, the switches are formed on the wafer, monolithically with the transmission antenna. Switches are therefore not reported on a printed circuit board (PCB for "Printed Circuit Board" in English) contrary to the state of the art, which leads to a lack of housing and electrical connections between the housing and the transmission antenna, sources of degradation of the performance of the elementary cell.
    In addition, the receiving antenna and the transmission antenna are planar antennas ("patch" in English). The receiving antenna is formed at the first surface of the first printed circuit board, while the transmitting antenna is formed at the first surface of the wafer. Thus, such an elementary cell according to the invention uses a hybrid "PCB / wafer" integration for reception / transmission antennas with planar technology, which is favorable to industrial production.
    Advantageously, the elementary cell comprises a second printed circuit board comprising a first surface assembled on the ground plane, and a second opposite surface, and the wafer is assembled to the second surface of the second card.
    In one embodiment, the first surface of the wafer is assembled to the second surface of the second card. In an alternative embodiment, the wafer includes a second surface opposite the first surface, and the second wafer surface is joined to the second surface of the second card.
    Advantageously, the elementary cell comprises a substrate of a dielectric material assembled to the second surface of the second card, and the substrate comprises a cavity shaped to receive the wafer.
    By "dielectric" is meant that the material has electrical conductivity at 300 K less than 10 -8 S / cm.
    Thus, the cavity of the substrate allows a good alignment of the wafer relative to the second printed circuit board.
    Advantageously, the phase shift circuit comprises a first set of electrically conductive tracks, arranged at the second surface of the second card to bias the switches.
    The tracks are made of an electrically conductive material. "Electrically conductive" means that the material has an electrical conductivity at 300 K greater than 103 S / cm. The electrically conductive material is preferably a metal, more preferably copper.
    Thus, such a second printed circuit board allows a polarization of the switches with minimal space, and without disturbing the radiation pattern of the transmission antenna.
    Advantageously, the phase shift circuit comprises: a second set of electrically conductive tracks, arranged at the first surface of the second card to polarize the switches, interconnection holes formed in the second card for connecting the first and second sets of electrically conductive tracks.
    Thus, such a second printed circuit board makes it possible to increase the number of available polarization lines with a minimum size, and without disturbing the radiation pattern of the transmission antenna. The vias ("vias" in English) provide the electrical connection between the first and second sets of electrically conductive tracks.
    Advantageously, the second surface of the second card comprises contact pads, and the wafer comprises brazing soldered balls on the contact pads so as to assemble the wafer to the second card.
    Thus, the contact pads ("bump contact" in English) and solder balls provide a more robust assembly wire wire ("wire bonding" in English), and with less electromagnetic disturbances.
    Advantageously, the contact pads are electrically connected to the first set of electrically conductive tracks, and the switches are electrically connected to the solder balls.
    Thus, there is obtained a vertical electrical connection, compact, between the switches and the polarization lines.
    Advantageously, the second surface of the second card comprises at least one cavity formed opposite the transmission antenna.
    Thus, such cavities make it possible to reduce the effective dielectric constant seen by the transmission antenna.
    According to one embodiment, each switch is an electromechanical microsystem comprising: a fixed actuation electrode formed at the first surface of the wafer; a membrane, formed at the first radiating surface of the transmission antenna, and movable between: a first position, corresponding to the conducting state, in which the membrane is in contact with the second radiating surface of the antenna; transmission; and a second position, corresponding to the off state, wherein the membrane is located at a distance from the second radiating surface of the transmitting antenna.
    In the present invention, the term "microelectromechanical systems" (MEMS) also covers an electromechanical nanosystem (NEMS).
    Advantageously, the elementary cell comprises an encapsulation layer arranged to encapsulate each electromechanical microsystem, the encapsulation layer being formed monolithically with the corresponding electromechanical microsystem.
    Thus, such an encapsulation layer makes it possible to improve the reliability of the corresponding electromechanical microsystem without major disturbance of the radiation pattern of the transmission antenna.
    According to an alternative embodiment, each switch comprises: an electrically conductive element comprising a first part formed at the first surface of the wafer, in contact with the first radiating surface of the transmission antenna, and a second part extending opposite the second radiating surface of the transmission antenna; a layer of a phase change material arranged between the second radiating surface of the transmission antenna and the second part of the electrically conductive element, the phase change material having a crystalline phase corresponding to the state, and an amorphous phase corresponding to the blocked state.
    By "electrically conductive" is meant that the element has an electrical conductivity at 300 K greater than 103 S / cm.
    Thus, such switches are particularly compact relative to MEMS.
    Advantageously, the phase-change material is selected from the group comprising GeTe, Ge2Sb2Te5.
    Thus, such chalcogenic alloys are phase change materials that can be used as memory.
    Advantageously, the wafer has a resistivity greater than or equal to 2000 Ω.cm.
    Thus, such resistivity makes it possible to reduce the dielectric losses relative to a standard substrate for radio frequency (RF) applications.
    Advantageously, the semiconductor material of the wafer is based on silicon.
    The present invention also relates to an antenna reconfigurable at an operating frequency, preferably between 30 GHz and 110 GHz, comprising a transmitter network comprising a plurality of elementary cells according to the invention. Other features and advantages will appear in the following description of various embodiments of the invention, given by way of non-limiting example, with reference to the accompanying drawings in which: - Figure 1 is a schematic view of a reconfigurable antenna with a transmitting network, - Figures 2a and 2b are schematic cross-sectional views of an elementary cell according to a first embodiment, - Figures 3 and 4 are schematic cross-sectional views illustrating two forms of execution of the elementary cell according to the first embodiment, - Figures 5a and 5b are schematic cross-sectional views of an elementary cell according to a second embodiment, - Figure 6 is a partial schematic view, in transparency, of an elementary cell according to the invention illustrating the transmission antenna, - Figure 7 is a schematic view part 1a of an elementary cell according to the invention illustrating the receiving antenna, - Figures 8a and 8b are schematic sectional views of two embodiments of switches, - Figure 9 is a schematic exploded perspective view of several elementary cells according to one embodiment of the invention.
    For the different embodiments, the same references will be used for identical elements or ensuring the same function, for the sake of simplification of the description. The technical characteristics described below for different embodiments are to be considered in isolation or in any technically possible combination.
    FIGS. 1 to 7 show an elementary cell 1 of a transmitting network RT for an antenna reconfigurable at an operating frequency, preferably between 30 GHz and 110 GHz.
    The elementary cell 1 comprises: a reception antenna 2, planar, intended to receive an incident wave E,; a planar transmission antenna 3, intended to transmit the incident wave E, with a phase shift (the transmitted and out-of-phase wave being illustrated in FIG. 1), and comprising first and second radiation surfaces 30, 31 separated between they by a separation zone ZS (clearly visible in Figure 6) so as to be electrically isolated, the transmission antenna 3 and the receiving antenna 2 being electrically connected to each other; a phase-shifting circuit configured to introduce the phase-shift, and comprising switches 4 each having an on state, respectively blocked, in which the corresponding switch 4 allows respectively blocking a flow of a current between the first and second radiation surfaces; 30, 31 of the transmission antenna 3; a ground plane 5 on each side of which the reception antenna 2 and the transmission antenna 3 are arranged; a first printed circuit board 6 comprising a first surface 60 provided with the reception antenna 2, and a second opposite surface provided with the ground plane 5.
    The elementary cell 1 comprises a wafer 7 of a semiconductor material, electrically isolated from the ground plane 5. The wafer 7 comprises a first surface 70 provided with the first and second radiating surfaces 30, 31 of the transmission antenna 3 The switches 4 are formed at the first surface 70 of the wafer 7, in the separation zone ZS, monolithically with the transmission antenna 3. The first surface 70 of the wafer 7 is advantageously covered with a dielectric layer 700. The dielectric layer 700 is preferably an oxide of the semiconductor material. The slice 7 advantageously has a resistivity greater than or equal to 2000 Q.cm. The semiconductor material of the wafer 7 is preferably based on silicon. For example, for an operating frequency of 60 GHz, the slice 7 preferably has a thickness of the order of 100 pm.
    The elementary cell 1 advantageously comprises a second printed circuit board 9 comprising a first surface 90 assembled on the ground plane 5, and a second surface 91 opposite. The wafer 7 is connected to the second surface 91 of the second card 9. In one embodiment, the first surface 70 of the wafer 7 is assembled to the second surface 91 of the second card 9. In a variant embodiment (illustrated in FIGS. 5a and 5b), the slice 7 comprises a second surface 71 opposite the first surface 70, and the second surface 71 of the slice 7 is joined to the second surface 91 of the second card 9. The second surface 91 of the second card 9 advantageously comprises at least one cavity 911 arranged opposite the transmission antenna 3. For example, the cavity or cavities 911 have a width of the order of 200 μm. As an exemplary embodiment, the first and second cards 6, 9 are Rogers R03003 type, with a relative permittivity equal to 3. For example, for an operating frequency of 60 GHz, the first card 6 presents preferably a thickness of the order of 250 μm, and the second card 9 preferably has a thickness of the order of 100 μm. The elementary cell 1 advantageously comprises a bonding film interposed between the first and second cards 6, 9.
    As illustrated in FIG. 1, the transmitting network RT comprises at least one radiation source S, preferably emitting in a spectral range between 30 GHz and 110 GHz, the source or sources of radiation S irradiating a set of elementary cells 1. The receiving antenna 2 is a planar antenna. By way of nonlimiting examples, the receiving antenna 2 may be of square, rectangular, slot, circular, elliptical, triangular, spiral, etc. type. Similarly, when the receiving antenna 2 is a slot antenna 20, the shape of the slot 20 may be for example U, rectangular, annular, circular, elliptical etc. As illustrated in FIG. 7, the receiving antenna 2 is a rectangular planar antenna 20 with a U-slot. The transmission antenna 3 is a planar antenna. As illustrated in FIG. 6, the first and second radiation surfaces 30, 31 are disjoint. A slot is advantageously provided in the transmission antenna 3 to electrically isolate the first and second radiation surfaces 30, 31. The slot defines the separation zone ZS. The slot is preferably annular, rectangular section. Of course, other shapes are possible for the slot such as an elliptical or circular shape. According to an alternative embodiment, the electrical insulation of the first and second radiation surfaces 30, 31 may be provided by a dielectric material.
    The first and second radiation surfaces 30, 31 advantageously have an axis of symmetry so as not to degrade the polarization of the transmitted wave And by the transmission antenna 3 by minimizing the excitation of undesired resonance modes. The first radiation surface 30 preferentially forms a ring with a rectangular section. The second radiation surface 31 preferentially forms a rectangular band. The second radiation surface 31 is advantageously circumscribed by the first radiation surface 30 in order to avoid the formation of parasitic currents. Additional radiation surfaces can advantageously be stacked on the first and second radiation surfaces 30, 31 in order to increase the bandwidth of the transmission antenna 3. The reception antenna 2 and the transmission antenna 3 are advantageously movable in rotation relative to each other so as to change the polarization of the incident wave E ,. Thus, a rotation of the transmission antenna 3 of 90 ° relative to the receiving antenna 2 makes it possible to pass, for example, from a vertical polarization of the incident wave E, to a horizontal polarization of the transmitted wave. And the receiving antenna 2 and the transmitting antenna 3 are electrically connected to one another so as to be able to feed them and couple them, partly via a main interconnection hole 8, which is preferably central preferably metal. The main via 8 passes through an opening in the ground plane 5. The main interconnection 8 is not in contact with the ground plane 5. For example, for an operating frequency of 60 GHz, the main via 8 preferably has a diameter of the order of 100 pm. The ground plane 5 forms an electromagnetic shielding between the receiving antenna 2 and the transmission antenna 3. Preferably, the receiving antenna 2 is electrically connected to the ground plane 5 via vias 80 preferably metal. By way of example, for an operating frequency of 60 GHz, the vias 80 preferably have a diameter of the order of 75 μm. The main via 8 is preferably connected to the receiving antenna 2 by a first connection point (not shown). The connection point is advantageously located near an edge of the receiving antenna 2 so as not to affect its radiation when the receiving antenna 2 is of square type. The connection point is advantageously located near the center of the receiving antenna 2 when the receiving antenna 2 is of U-slot type. In general, the position of the connection point varies according to the specific geometry of the antenna. receiving antenna 2 to excite the fundamental mode of resonance. The second surface 91 of the second card 9 advantageously comprises contact pads 910, 910 '. The wafer 7 advantageously comprises solder balls B, preferably metal brazed on the contact pads 910, 910 'so as to assemble the wafer 7 to the second card 9. The contact pads 910' are advantageously located on the periphery of the the second surface 91 of the second card 9 to ensure a good mechanical strength of the elementary cell 1. The contact pads 910 also provide an electrical connection in conjugation with the solder balls B. The main interconnection 8 is preferably connected to the transmission antenna 3 by a second connection point (not shown), by means of a soldering ball B brazed to a contact pad 910. The second connection point is advantageously located near the center of the transmission antenna 3 so as to favor the fundamental mode of resonance.
    As illustrated in FIG. 9, the elementary cell 1 advantageously comprises a substrate 10 of a dielectric material assembled to the second surface 71 of the second card, and the substrate 10 comprises a cavity 100 shaped to receive the wafer 7. Thus, the cavity 100 of the substrate 10 and the contact pads 910, 910 'allow to obtain a good alignment of the wafer 7 relative to the second printed circuit board 9.
    The phase shift circuit advantageously comprises a first set of electrically conductive tracks P1, arranged at the second surface 91 of the second card 9 to polarize the switches 4, and thus form control means for the switches 4. The contact pads 910 are advantageously electrically connected to the first set of electrically conductive tracks P1. As illustrated in FIG. 4, the phase shift circuit advantageously comprises: a second set of electrically conductive tracks P2, arranged at the first surface 90 of the second card 9 for biasing the switches, vias 92, preferably metal, formed in the second card 9 to connect the first and second sets of tracks P1, P2 electrically conductive.
    The phase shifting circuit advantageously comprises first and second transmission lines LT1, LT2 arranged at the first surface 70 of the slot 7. The first transmission lines LT1 are arranged to connect the tracks P1 to the switches 4 in order to be able to control the switches 4. The second transmission lines LT2 are arranged in the separation zone ZS so as to transfer the mass to the switches 4.
    When the second surface 71 of the wafer 7 is assembled to the second surface 91 of the second card 9, the elementary cell 1 advantageously comprises interconnection holes 72 formed in the wafer 7, such as TSV ("Through-silicon via In the English language) when the semiconductor material is based on silicon. The vias 72 are arranged to electrically connect the first and second transmission lines LT1, LT2 to the first set of tracks P1.
    The phase shift circuit advantageously comprises two switches 4 arranged on either side of the second connection point in the separation zone ZS. The two switches 4 can form two independent components or a single component type SPDT (for "Single Pole Double Throw" in English), with an input and two switched outputs. The switches 4 are advantageously arranged to join the first and second radiation surfaces 30, 31 in order to allow the flow of a current between the first and second radiation surfaces 30, 31 in the on state. The second radiating surface 31 advantageously has an area small enough to prevent the appearance of spurious radiation and sufficiently large to carry the current from the second connection point to the switches 4.
    The switches 4 are advantageously electrically connected to the solder balls B. The solder balls B preferably have a diameter of the order of 100 μm. The two switches 4 are advantageously alternately controlled so that when one of the switches 4 is in the on state, the other switch 4 is in the off state. The transmitted wave And the transmission antenna 3 can be in phase with the incident wave E, or phase shifted by 180 °. The switches 4 are configured to excite the transmission antenna 3 in phase or in phase opposition with the receiving antenna 2.
    According to one embodiment illustrated in FIG. 8a, each switch 4 is an electromechanical microsystem comprising: a fixed operating electrode 400, formed at the first surface 70 of the wafer 7; a membrane 401, formed at the first radiation surface 30 of the transmission antenna 3, and movable between: a first position, corresponding to the on state, in which the membrane 401 is in contact with the second radiation surface; 31 of the transmission antenna 3; and a second position, corresponding to the blocked state, in which the membrane 401 is located at a distance from the second radiating surface 31 of the transmission antenna 3.
    The transition from the off state to the on state is effected by applying a difference of potentials, preferably of the order of 30 V, between the actuation electrode 400 and the membrane 401. The actuation electrode 400 is an electrically conductive material, preferably a metallic material such as Au. The membrane 401 is of an electrically conductive material, preferably a metallic material. The formation of the electromechanical microsystem may require the use of a first sacrificial layer 401a, for example amorphous silicon, deposited on the actuation electrode 400. The first sacrificial layer 401a is etched locally in order to make an electrical contact for the electrically conductive material of the actuating electrode 400. The elementary cell 1 advantageously comprises an encapsulation layer 40 arranged to encapsulate each electromechanical microsystem, the encapsulation layer 40 being formed monolithically with the corresponding electromechanical microsystem. By way of example, for this purpose, a second sacrificial layer 401b, such as a photosensitive resin, is deposited on the corresponding electromechanical microsystem. Then a layer 404 of silicon dioxide is deposited on the second sacrificial layer 401b. Orifices are provided in the layer 404 to remove the first and second sacrificial layers 401a, 401b. These orifices are then plugged, for example with a polymer material 405, preferably benzocyclobutene. The layer 404 of silicon dioxide and the polymeric material 405 form the encapsulation layer 40.
    According to an alternative embodiment illustrated in FIG. 8b, each switch 4 comprises: an electrically conductive element 402 comprising a first part 402a formed at the first surface 70 of the wafer 7, in contact with the first radiating surface 30 of the transmission antenna 3, and a second portion 402b extending opposite the second radiating surface 31 of the transmission antenna 3; a layer 403 of a phase-change material, arranged between the second radiation surface 31 of the transmission antenna 3 and the second part 402b of the electrically conductive element 402, the phase-change material having a phase crystalline corresponding to the on state, and an amorphous phase corresponding to the blocked state. The phase change material is preferably selected from the group consisting of GeTe, Ge2Sb2Te5. The reversible transition from the off state to the on state is effected under the effect of a thermal pulse applied by a current peak generating a Joule effect in the phase change material. Other embodiments are possible for the switches 4. As non-limiting examples, switches 4 radio frequency diodes, transistors, photodiodes, phototransistors are possible. The choice of a device for controlling the switches 4 depends on the chosen technology. By way of examples, the following devices may be used: an optical fiber for a photoelectric switch 4, a laser beam generated by external means and exciting a photoelectric type switch, an electromagnetic wave according to the principles of FIG. tele-powering known in the field of RFID ("Radio Frequency Identification" in English).
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    claims
    1. Elementary cell (1) of a transmitting network (RT) for a reconfigurable antenna at an operating frequency, preferably between 30 GHz and 110 GHz, the elementary cell (1) comprising: a reception antenna (2) ), planar, intended to receive an incident wave (E,); a planar transmitting antenna (3) for transmitting the incident wave (E) with a phase shift, and comprising first and second radiation surfaces (30, 31) separated from each other by a separation zone (ZS ) so as to be electrically isolated; a phase-shifting circuit configured to introduce the phase shift, and comprising switches (4) each having an on state, respectively blocked, in which the corresponding switch (4) authorizes, respectively blocks, a flow of a current between the first and second second radiating surfaces (30, 31) of the transmission antenna (3); - a ground plane (5) on either side of which the receiving antenna (2) and the transmission antenna (3) are arranged; a first printed circuit board (6) comprising a first surface (60) provided with the receiving antenna (2), and a second opposite surface provided with the ground plane (5); the elementary cell (1) being characterized in that it comprises a wafer (7) of a semiconductor material, electrically isolated from the ground plane (5), and comprising a first surface (70) provided with the first and second radiation surfaces (30, 31) of the transmission antenna (3), and in that the switches (4) are formed at the first surface (70) of the wafer (7) in the separation zone (ZS ), monolithically with the transmission antenna (3).
    [2" id="c-fr-0002]
    2. Elementary cell (1) according to claim 1, characterized in that it comprises a second printed circuit board (9) comprising a first surface (90) assembled on the ground plane (5), and a second surface ( 91) opposite, and in that the wafer (7) is connected to the second surface (91) of the second card (9).
    [3" id="c-fr-0003]
    3. Elementary cell (1) according to claim 2, characterized in that it comprises a substrate of a dielectric material assembled to the second surface (91) of the second card (9), and in that the substrate comprises a cavity shaped to receive the slice (7).
    [4" id="c-fr-0004]
    4. Elementary cell (1) according to claim 2 or 3, characterized in that the phase shift circuit comprises a first set of electrically conductive tracks (P1), arranged at the second surface (91) of the second card (9) for polarize the switches (4).
    [5" id="c-fr-0005]
    5. Elementary cell (1) according to claim 4, characterized in that the phase shift circuit comprises: a second set of electrically conductive tracks (P2), arranged at the first surface (90) of the second card (9) for polarizing the switches (4); - vias (92) in the second card (9) for connecting the first and second sets of electrically conductive tracks (P1, P2).
    [6" id="c-fr-0006]
    6. Elementary cell (1) according to one of claims 2 to 5, characterized in that the second surface (91) of the second card (9) comprises contact pads (910, 910 '), and in that the wafer (7) comprises brazing balls (B) brazed to the contact pads (910, 910 ') so as to assemble the wafer (7) to the second card (9).
    [7" id="c-fr-0007]
    Elementary cell (1) according to claim 6 in combination with claim 4 or 5, characterized in that the contact pads (910) are electrically connected to the first set of electrically conductive tracks (P1), and that the switches (4) are electrically connected to the solder balls (B).
    [8" id="c-fr-0008]
    8. Elementary cell (1) according to one of claims 2 to 7, characterized in that the second surface (91) of the second card (9) comprises at least one cavity (911) arranged opposite the antenna of transmission (3).
    [9" id="c-fr-0009]
    9. Elementary cell (1) according to one of claims 1 to 8, characterized in that each switch (4) is an electromechanical microsystem comprising: - a fixed actuating electrode (400) formed at the first surface (70). ) of the tranche (7); a membrane (401), formed at the first radiating surface (30) of the transmission antenna (3), and movable between: a first position, corresponding to the on state, in which the membrane (401) is in contact with the second radiating surface (31) of the transmission antenna (3); and a second position, corresponding to the off state, in which the membrane (401) is located at a distance from the second radiating surface (31) of the transmission antenna (3).
    [10" id="c-fr-0010]
    10. Elementary cell (1) according to claim 9, characterized in that it comprises an encapsulation layer (40) arranged to encapsulate each electromechanical microsystem, the encapsulation layer (40) being formed monolithically with the microsystem corresponding electromechanical.
    [11" id="c-fr-0011]
    11. Elementary cell (1) according to one of claims 1 to 8, characterized in that each switch (4) comprises: - an electrically conductive element (402) comprising a first portion (402a) formed at the first surface (70); ) of the wafer (7), in contact with the first radiation surface (30) of the transmission antenna (3), and a second portion (402b) extending opposite the second radiation surface (31) the transmission antenna (3); a layer (403) of a phase change material arranged between the second radiating surface (31) of the transmission antenna (3) and the second portion (402b) of the electrically conductive element (402). the phase change material having a crystalline phase corresponding to the on state, and an amorphous phase corresponding to the quiescent state.
    [12" id="c-fr-0012]
    12. Elementary cell (1) according to claim 11, characterized in that the phase-change material is selected from the group comprising GeTe, Ge2Sb2Te5.
    [13" id="c-fr-0013]
    13. Elementary cell (1) according to one of claims 1 to 12, characterized in that the wafer (7) has a resistivity greater than or equal to 2000 Q.cm.
    [14" id="c-fr-0014]
    14. Elementary cell according to one of claims 1 to 13, characterized in that the semiconductor material of the wafer (7) is based on silicon.
    [15" id="c-fr-0015]
    15. Antenna reconfigurable at an operating frequency, preferably between 30 GHz and 110 GHz, comprising a transmitter network (RT) comprising a plurality of elementary cells (1) according to one of claims 1 to 14.
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    EP3125362A1|2017-02-01|
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    法律状态:
    2016-07-29| PLFP| Fee payment|Year of fee payment: 2 |
    2017-02-03| PLSC| Publication of the preliminary search report|Effective date: 20170203 |
    2017-07-31| PLFP| Fee payment|Year of fee payment: 3 |
    2018-07-27| PLFP| Fee payment|Year of fee payment: 4 |
    2020-04-10| ST| Notification of lapse|Effective date: 20200306 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1557207A|FR3039711B1|2015-07-28|2015-07-28|ELEMENTARY CELL OF A TRANSMITTER NETWORK FOR A RECONFIGURABLE ANTENNA.|FR1557207A| FR3039711B1|2015-07-28|2015-07-28|ELEMENTARY CELL OF A TRANSMITTER NETWORK FOR A RECONFIGURABLE ANTENNA.|
    EP16181407.4A| EP3125362B1|2015-07-28|2016-07-27|Elementary cell of a transmitter network for a reconfigurable antenna|
    US15/222,496| US9941592B2|2015-07-28|2016-07-28|Transmitarray unit cell for a reconfigurable antenna|
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